| PART |
Description |
Maker |
| HY64UD16322A HY64UD16322A-DF70E HY64UD16322A-DF70I |
2M x 16 bit Low Low Power 1T/1C Pseudo SRAM
2M x 16 bit Low Low Power 1T/1C Pseudo SRAM 200万16位低功T/1C伪静态存储器
Mobile PSRAM - 32Mb
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| EM567169BC-60 EM567169BC-65 EM567169BC EM567169BC- |
2M x 16 Pseudo SRAM
|
Etron Technology, Inc.
|
| TC51WHM516AXBN |
SRAM - Pseudo SRAM
|
TOSHIBA
|
| IS75V16F64GS16-7080DI |
64 Mbit FLASH MEMORY AND 16 Mbit PSEUDO SRAM STACKED MULTI-CHIP PACKAGE (MCP)
|
Integrated Silicon Solution, Inc.
|
| HY64UD16162M-DF85E HY64UD16162M-DF85I HY64UD16162M |
1M x 16 bit Low Low Power 1T/1C Pseudo SRAM
|
Hynix Semiconductor
|
| M72DW64000B90ZT M72DW64000B M72DW64000B70ZT M72DW6 |
64Mbit (x8/ x16, Multiple Bank, Boot Block) Flash Memory and 16Mbit Pseudo SRAM, 3V Supply, Multiple Memory Product
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| CYU01M16ZFCU-70BVXI CYU01M16ZFC |
1M X 16 PSEUDO STATIC RAM, 70 ns, PBGA48 6 X 8 MM, 1 MM HEIGHT, LEAD FREE, FBGA-48
16-Mbit (1M x 16) Pseudo Static RAM
|
Cypress Semiconductor, Corp.
|
| AM50DL128CG85IS AM50DL128CG85IT AM50DL128CG70IS AM |
64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories and 64 Mbit (4 M x 16-Bit) Pseudo Static RAM
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
|
AMD[Advanced Micro Devices]
SPANSION[SPANSION]
|
| IS32WV10008ALL-85BI IS32WV10008ALL-70TI IS32WV1000 |
1M X 8 PSEUDO STATIC RAM, 85 ns, PBGA48
1M X 8 PSEUDO STATIC RAM, 70 ns, PDSO44
1M X 8 PSEUDO STATIC RAM, 85 ns, PDSO44
1M X 8 PSEUDO STATIC RAM, 100 ns, PBGA48
|
INTEGRATED SILICON SOLUTION INC
|
| CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 |
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟
CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes
512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| M24L416256SA-60BEG M24L416256SA-60BIG M24L416256SA |
4-Mbit (256K x 16) Pseudo Static RAM
256K X 16 PSEUDO STATIC RAM, 60 ns, PDSO44
|
Elite Semiconductor Mem...
Elite Semiconductor Memory Technology Inc.
|
